欧美 日韩 国产精品,亚洲欧洲国产性爱视频,国产精品色综合一区二区三区,野花社区视频www中国,楼梯间被h肉邻居,激情偷拍自拍,娱乐圈调教黄暴hh文

CN EN
Home
About Us
Newpros
1200V 80 mΩ SIC MOSFET
1200V 80 mΩ SIC MOSFET Back
 PDF

Introduction 1. In recent years, the PV inverter market has entered a period of rapid development, and the demand for silicon carbide power devices has increased rapidly. When silicon carbide diode and MOSFET should be used in the BOOST circuit, the switching speed of the system can be improved, so as to optimize the energy consumption and volume of the whole system.
2. Silicon carbide MOSFET to match the PV industry customer needs, switching performance, pass-through capacity and product reliability can be standardized to the industry's best;
3. It is not only suitable for conventional switching applications, but also meets the high pressure and high speed switching applications with high control requirements. It adopts environment-friendly materials and conforms to RoHS standards.
Features 1. High temperature resistance, operating temperature (175°C); Unipolar device, fast switching speed, low loss, suitable for high voltage, high frequency application conditions;
2. Using advanced thinning process, SIC MOSFET has excellent low impedance characteristics, reduce device energy loss;
3. Product packaging type: TO-247-3L, TO-247-4L and other packaging forms can be selected;
4. Passed the stringent reliability certification of the industry, including HTRB, HTGB test and HV-H3TRB test in large quantities.
SPECIFICATION

YJD212080NCFG1

Related new products

New N150V SGT MOSFETs

MT-W Series Three Phase Bridge Rectifier

SOD-323HE Diode for Automotive 、Home Appliances, Etc

IGBT high frequency series C1 module

Small Signal Schottky and Switching Diode in DFN0603 Package

Portable energy storage power supply special plug-in type fast recovery bridge

JC

High current patch rectifier bridge

100V TOLL Package MOSFET

IGBT Discrete For PTC of Auto Industry